完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLin, TCen_US
dc.contributor.authorWu, JCen_US
dc.date.accessioned2014-12-08T15:26:36Z-
dc.date.available2014-12-08T15:26:36Z-
dc.date.issued2002en_US
dc.identifier.isbn0-7803-7363-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/18902-
dc.description.abstractThis paper describes a 3V 8-bit 50MSPS two-step analog-to-digital converter implemented in a 0.35mum 1P4M logic CMOS process. A PMOS biased in accumulation mode was used as a coupling capacitor in this ADC, so that the more expensive mixed mode process with double poly or MIM capacitors can be avoided. A modified switch box which greatly reduces the number of switches needed was also presented in this paper. The modified switch box can reduce the capacitance loading effect, of the resistor ladder DAC (R-DAC) and thus making the settling time of the DAC faster. The ADC occupies a die area of 0.38mm(2) (450mum*850mum) and dissipates 64mW at 50MHz clock rate with 3V single supply voltage. The FFT simulation result shows that the SNDR is 48.18dB at 5MHz input frequency and 50MSPS conversion rate and the static simulation shows that the max. INL/DNL is less than 0.5LSB/0.5LSB.en_US
dc.language.isoen_USen_US
dc.subjectPMOS capacitoren_US
dc.subjectA/D converteren_US
dc.subjectswitch boxen_US
dc.titleA two-step A/D converter in digital CMOS processesen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2002 IEEE ASIA-PACIFIC CONFERENCE ON ASIC PROCEEDINGSen_US
dc.citation.spage177en_US
dc.citation.epage180en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000180272700045-
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