标题: | Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process |
作者: | Fu, Yi-Keng Chen, Bo-Chun Fang, Yen-Hsiang Jiang, Ren-Hao Lu, Yu-Hsuan Xuan, Rong Huang, Kai-Feng Lin, Chia-Feng Su, Yan-Kuin Chen, Jebb-Fang Chang, Chun-Yen 电子物理学系 Department of Electrophysics |
关键字: | Chemical wet-etching;GaN;light extraction;near-ultraviolet (NUV) light-emitting diode (LED) |
公开日期: | 1-十月-2011 |
摘要: | The InGaN-based light-emitting diodes (LEDs) with a roughened backside on the N-face surface of GaN substrate were fabricated through a chemical wet-etching process to increase light-extraction efficiency. The stable crystallographic etching planes were formed as the GaN {10 (11) over bar} planes. When the near-ultraviolet and blue LED were operated as a forward current of 20 mA, the output power of LEDs was improved from 13.2 and 19.9 mW to 25.6 and 24.0 mW, respectively. The different enhanced ratio is attributed to the different transmittance as a function of wavelength is caused from hexagonal pyramid on N-face GaN substrate after wet-etching process. |
URI: | http://dx.doi.org/10.1109/LPT.2011.2161276 http://hdl.handle.net/11536/18960 |
ISSN: | 1041-1135 |
DOI: | 10.1109/LPT.2011.2161276 |
期刊: | IEEE PHOTONICS TECHNOLOGY LETTERS |
Volume: | 23 |
Issue: | 19 |
起始页: | 1373 |
结束页: | 1375 |
显示于类别: | Articles |
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