完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLin, CHen_US
dc.contributor.authorLo, YCen_US
dc.contributor.authorHsu, WSen_US
dc.date.accessioned2014-12-08T15:26:43Z-
dc.date.available2014-12-08T15:26:43Z-
dc.date.issued2001en_US
dc.identifier.isbn0-8194-4322-0en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/18980-
dc.identifier.urihttp://dx.doi.org/10.1117/12.449010en_US
dc.description.abstractIn the current paper, the fabrication process of a novel proposed hemispherical polysilicon shell standing on a hemispherical silicon cavity is demonstrated. This micro-fabrication process combines both bulk and surface micromachining, which include the isotropic wet etching, a novel mask design, the thick photo resist coating and exposure, and high-aspect-ratio curved sacrificial technique. In isotropic wet etching of a hemispherical cavity, the optimal concentration of etchant is experimentally determined along with adequate ultrasonic vibration during wet etching to produce the circle-like of hemispherical cavity. The conventional alignment mark, which will be destroyed during the rather long isotropic wet etching process, is replaced by a novel mask design with the second alignment mark. Also, for a deep hemispherical cavity larger than 100mum, the traditional photo resist can not be coated on the corner surface well. The thick photo resist, AZ4620, is found to be able to overcome this problem and be successfully exposed all through its bottom surface. Furthermore, the deposited sacrificial layer materials (PSG) on this cavity will usually result in thinner layer near the corner. In addition, the curved gap of PSG layer has the feature with high-aspect-ratio. These make the PSG etching difficult. Therefore, two steps etching process with two different hydrofluoric concentrations are used to release the PSG with 2mum thickness and 150mum arc length.en_US
dc.language.isoen_USen_US
dc.subjectisotropic wet etchingen_US
dc.subjecthemispherical cavityen_US
dc.subjectpolysilicon shellsen_US
dc.subjecthigh-aspect-ratioen_US
dc.titleMicro-fabrication of hemispherical poly-silicon shells standing on hemispherical cavitiesen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1117/12.449010en_US
dc.identifier.journalDEVICE AND PROCESS TECHNOLOGIES FOR MEMS AND MICROELECTRONICS IIen_US
dc.citation.volume4592en_US
dc.citation.spage514en_US
dc.citation.epage524en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.identifier.wosnumberWOS:000174910000059-
顯示於類別:會議論文


文件中的檔案:

  1. 000174910000059.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。