THz emission characteristics of photoconductive antennas with different gap size fabricated on arsenic-ion-implanted GaAs

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Liu, TA	en_US
dc.contributor.author	Tani, M	en_US
dc.contributor.author	Lin, GR	en_US
dc.contributor.author	Pan, CL	en_US
dc.date.accessioned	2014-12-08T15:26:44Z	-
dc.date.available	2014-12-08T15:26:44Z	-
dc.date.issued	2001	en_US
dc.identifier.isbn	0-8194-4204-6	en_US
dc.identifier.issn	0277-786X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19007	-
dc.identifier.uri	http://dx.doi.org/10.1117/12.455413	en_US
dc.description.abstract	Significant difference in temporal and spectral characteristics of THz radiation emitted by large- (1 mm) and small- (5mum) aperture dipole antennas fabricated on arsenic-ion-implanted GaAs and undoped semi-insulating GaAs is reported and attributed to the geometry of the antenna.	en_US
dc.language.iso	en_US	en_US
dc.subject	THz radiation	en_US
dc.subject	arsenic-ion-implanted GaAs	en_US
dc.subject	large-aperture photoconductive antenna	en_US
dc.subject	dipole antenna	en_US
dc.title	THz emission characteristics of photoconductive antennas with different gap size fabricated on arsenic-ion-implanted GaAs	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1117/12.455413	en_US
dc.identifier.journal	MULTIFREQUENCY ELECTRONIC/PHOTONIC DEVICES AND SYSTEMS FOR DUAL-USE APPLICATIONS	en_US
dc.citation.volume	4490	en_US
dc.citation.spage	96	en_US
dc.citation.epage	103	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000174396400011	-
顯示於類別：	會議論文

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。