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dc.contributor.authorLiu, TAen_US
dc.contributor.authorTani, Men_US
dc.contributor.authorLin, GRen_US
dc.contributor.authorPan, CLen_US
dc.date.accessioned2014-12-08T15:26:44Z-
dc.date.available2014-12-08T15:26:44Z-
dc.date.issued2001en_US
dc.identifier.isbn0-8194-4204-6en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/19007-
dc.identifier.urihttp://dx.doi.org/10.1117/12.455413en_US
dc.description.abstractSignificant difference in temporal and spectral characteristics of THz radiation emitted by large- (1 mm) and small- (5mum) aperture dipole antennas fabricated on arsenic-ion-implanted GaAs and undoped semi-insulating GaAs is reported and attributed to the geometry of the antenna.en_US
dc.language.isoen_USen_US
dc.subjectTHz radiationen_US
dc.subjectarsenic-ion-implanted GaAsen_US
dc.subjectlarge-aperture photoconductive antennaen_US
dc.subjectdipole antennaen_US
dc.titleTHz emission characteristics of photoconductive antennas with different gap size fabricated on arsenic-ion-implanted GaAsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1117/12.455413en_US
dc.identifier.journalMULTIFREQUENCY ELECTRONIC/PHOTONIC DEVICES AND SYSTEMS FOR DUAL-USE APPLICATIONSen_US
dc.citation.volume4490en_US
dc.citation.spage96en_US
dc.citation.epage103en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000174396400011-
Appears in Collections:Conferences Paper


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