標題: Transmission line noise from standard and proton-implanted Si
作者: Chan, KT
Chin, A
Kwei, CM
Shien, DT
Lin, WJ
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2001
摘要: We have measured the NF(min) of transmission lines on 10(6) ohm-cm proton implanted Si, Si-on-Quartz, and standard Si with top isolation oxide. Trransmission lines on proton implanted Si shows the lowest NF(min) of less than 0.2dB because of the low substrate loss due to the high resistivity. The proton implantation did not contribute to excess shot noise induced by carriers trapping and de-trapping because of the very small diffusion length to metal line.
URI: http://hdl.handle.net/11536/19052
ISBN: 0-7803-6538-0
ISSN: 0149-645X
期刊: 2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3
起始頁: 763
結束頁: 766
顯示於類別:會議論文