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dc.contributor.authorLee, BCen_US
dc.contributor.authorLee, HMen_US
dc.contributor.authorWu, JCen_US
dc.contributor.authorChang, YPen_US
dc.contributor.authorSun, KWen_US
dc.contributor.authorLee, CPen_US
dc.date.accessioned2014-12-08T15:26:52Z-
dc.date.available2014-12-08T15:26:52Z-
dc.date.issued2001en_US
dc.identifier.isbn981-02-4618-8en_US
dc.identifier.urihttp://hdl.handle.net/11536/19111-
dc.identifier.urihttp://dx.doi.org/10.1142/9789812810076_0064en_US
dc.description.abstractWe present experimental results on the growth of InAs self-organized quantum dots on patterned substrates via molecular beam epitaxy. Luminescence spectra of these quantum dots have been studied.en_US
dc.language.isoen_USen_US
dc.titleMolecular beam epitaxial growth and photoluminescence studies of InAs self-organized quantum dots on patterned GaAs (001) substratesen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1142/9789812810076_0064en_US
dc.identifier.journalPHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES TO NANOMEETING-2001en_US
dc.citation.spage376en_US
dc.citation.epage380en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000171891300064-
Appears in Collections:Conferences Paper