Molecular beam epitaxial growth and photoluminescence studies of InAs self-organized quantum dots on patterned GaAs (001) substrates

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lee, BC	en_US
dc.contributor.author	Lee, HM	en_US
dc.contributor.author	Wu, JC	en_US
dc.contributor.author	Chang, YP	en_US
dc.contributor.author	Sun, KW	en_US
dc.contributor.author	Lee, CP	en_US
dc.date.accessioned	2014-12-08T15:26:52Z	-
dc.date.available	2014-12-08T15:26:52Z	-
dc.date.issued	2001	en_US
dc.identifier.isbn	981-02-4618-8	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19111	-
dc.identifier.uri	http://dx.doi.org/10.1142/9789812810076_0064	en_US
dc.description.abstract	We present experimental results on the growth of InAs self-organized quantum dots on patterned substrates via molecular beam epitaxy. Luminescence spectra of these quantum dots have been studied.	en_US
dc.language.iso	en_US	en_US
dc.title	Molecular beam epitaxial growth and photoluminescence studies of InAs self-organized quantum dots on patterned GaAs (001) substrates	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1142/9789812810076_0064	en_US
dc.identifier.journal	PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES TO NANOMEETING-2001	en_US
dc.citation.spage	376	en_US
dc.citation.epage	380	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000171891300064	-
顯示於類別：	會議論文