標題: | AIGaN/GaN HEMT sub-bands study using low-temperature photoluminescence |
作者: | Fang, CY Lin, CF Lee, CS Chang, EY Feng, MS 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 2001 |
摘要: | Al0.1Ga0.9N/GaN HEMTs (High Electron Mobility Transistor) structures with different delta-doping concentration and spacer thickness grown on sapphire by MOCVD are studied. The hall mobility is as high as 1333 cm(2)/V s. at room temperature and 6330 cm(2)/V s at 77 K. Obvious 2-DEG phenomena not clearly resolved in literatures before are observed by PL spectra measured at low temperature. The influences of delta-doping concentration and spacer thickness on the 2-DEG phenomena are discussed. Peaks red-shift of different HEMT structures due to temperature variation are observed in 2-DEG sub-bands as well as at the band-edge emission that is believed as a strong evidence of 2DEG sub-bands to valence bands transmission. |
URI: | http://hdl.handle.net/11536/19125 |
ISBN: | 1-56677-353-9 |
期刊: | STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXV) |
Volume: | 2001 |
Issue: | 20 |
起始頁: | 96 |
結束頁: | 102 |
顯示於類別: | 會議論文 |