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dc.contributor.authorKo, FHen_US
dc.contributor.authorTing, JHen_US
dc.contributor.authorChou, CTen_US
dc.contributor.authorHsiao, LTen_US
dc.contributor.authorHuang, TYen_US
dc.contributor.authorDai, BTen_US
dc.date.accessioned2014-12-08T15:26:56Z-
dc.date.available2014-12-08T15:26:56Z-
dc.date.issued2000en_US
dc.identifier.isbn0-8194-3617-8en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/19167-
dc.identifier.urihttp://dx.doi.org/10.1117/12.388268en_US
dc.description.abstractThe modification of the electron beam resist by spiking with various amounts of poly(styrene-co-maleic anhydride) copolymer is performed. The characterization of resist solutions by gel permeation chromatography (GPC) and viscosity measurement reveals the main polymer chain in the resist is unchangeable, irrespective of the amount of modification. In addition, the spiking copolymer exists in original form. The viscosity of the resist increases with the amount of spiking polymer. Our thermal analysis results show that the resists are mainly decomposed in two regions (280 and 544 degrees C). The mass loss at 280 degrees C is significant higher than at 544 degrees C. The spectra of Fourier transform infrared red (FTIR) spectrometer indicate the extent of carbonate group decomposition decreases with temperature for resists. The plasma etching experiment indicates the promotion of etching resistance of the resist film is due to modification, while the resolution, sensitivity and contrast are not degraded. Owing to the polymer aggregation effect, the stripping performance of the resist film can achieve better after copolymer modification.en_US
dc.language.isoen_USen_US
dc.subjectresist modificationen_US
dc.subjectresist characterizationen_US
dc.subjectthermal analysisen_US
dc.subjectresist stripping performanceen_US
dc.titleFilm characterization and evaluation of process performance for the modified electron beam resisten_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1117/12.388268en_US
dc.identifier.journalADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2en_US
dc.citation.volume3999en_US
dc.citation.spage1046en_US
dc.citation.epage1055en_US
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentNano Facility Centeren_US
dc.identifier.wosnumberWOS:000088786500105-
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