標題: | Investigation of Emission Polarization and Strain in InGaN-GaN Multiple Quantum Wells on Nanorod Epitaxially Lateral Overgrowth Templates |
作者: | Huang, Huei-Min Lu, Tien-Chang Chang, Chiao-Yun Ling, Shih-Chun Chan, Wei-Wen Kuo, Hao-Chung Wang, Shing-Chung 光電工程學系 Department of Photonics |
關鍵字: | a-plane;InGaN-GaN MQWs;polarization;strain |
公開日期: | 15-九月-2011 |
摘要: | Non-polar (a-plane) InGaN-GaN multiple quantum wells (MQWs) on the GaN nanorod epitaxially lateral overgrowth templates with different nanorod height have been fabricated. The average in-plane strain in the InGaN MQWs has been determined from 2.73 x 10(-2) to 2.58 x 10(-2) while the nanorod height in templates increases from 0 to 1.7 mu m. The polarization ratio of the emission from InGaN MQWs varies from 85% to 53% along with the increase of the GaN nanorod height. The reduction of polarization ratio has been attributed to the partial strain relaxation within the epitaxial structures as a result of growth on the GaN nanorod templates and the micro-size air-voids observed in the nanorod templates. |
URI: | http://dx.doi.org/10.1109/JLT.2011.2164896 http://hdl.handle.net/11536/19170 |
ISSN: | 0733-8724 |
DOI: | 10.1109/JLT.2011.2164896 |
期刊: | JOURNAL OF LIGHTWAVE TECHNOLOGY |
Volume: | 29 |
Issue: | 18 |
起始頁: | 2761 |
結束頁: | 2675 |
顯示於類別: | 期刊論文 |