Long-term photocapacitance decay behavior in undoped GaN

Abstract

We have employed the photocapacitance measurement to examine the physical properties of GaN Schottky diode made from the undoped epilayer grown by metalorganic vapor phase epitaxy. The resulted transient capacitance spectrum shows that the diode exhibits a characteristic of long-term logarithmic-type decaying behavior, which, we believe, is correlated closely to the linear arranged traps close to the core of the threading edge dislocations.