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dc.contributor.authorChung, HMen_US
dc.contributor.authorPan, YCen_US
dc.contributor.authorChung, WCen_US
dc.contributor.authorChen, NCen_US
dc.contributor.authorTsai, CCen_US
dc.contributor.authorChiang, CIen_US
dc.contributor.authorLin, CHen_US
dc.contributor.authorChang, Hen_US
dc.contributor.authorLee, MCen_US
dc.contributor.authorChen, WHen_US
dc.contributor.authorChen, WKen_US
dc.date.accessioned2014-12-08T15:27:01Z-
dc.date.available2014-12-08T15:27:01Z-
dc.date.issued2000en_US
dc.identifier.isbn4-900526-13-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/19232-
dc.description.abstractWe have employed the photocapacitance measurement to examine the physical properties of GaN Schottky diode made from the undoped epilayer grown by metalorganic vapor phase epitaxy. The resulted transient capacitance spectrum shows that the diode exhibits a characteristic of long-term logarithmic-type decaying behavior, which, we believe, is correlated closely to the linear arranged traps close to the core of the threading edge dislocations.en_US
dc.language.isoen_USen_US
dc.subjectGaNen_US
dc.subjectphotocapacitanceen_US
dc.subjectlogarithmicen_US
dc.titleLong-term photocapacitance decay behavior in undoped GaNen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORSen_US
dc.citation.volume1en_US
dc.citation.spage463en_US
dc.citation.epage466en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000171608500118-
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