標題: | Design of efficient high-gower diode-end-pumped TEMoo Nd : YVO4 laser |
作者: | Chen, YF Liao, CC Lan, YP Wang, SC 電子物理學系 Department of Electrophysics |
關鍵字: | thermal fracture;end-pumped;Nd-doped laser;Q-switched |
公開日期: | 2000 |
摘要: | A systematic investigation on a series of Nd:YVO4 crystals with different dopant concentrations is conducted to scale the diode-end-pumped laser performance to higher powers. The analysis reveals that lowering the dopant concentration linearly extends the fracture-limited pump power and the thermal shock parameter plays an important role in the estimation of the fracture-limited pump power: The thermal shock parameter in Nd:YVO4 crystals has been determined from the laser experiments, Based onthe analysis, we demonstrate a compact and efficient diode-end-pumped TEMoo laser with output power of 25.2-W for 52-W of incident pump power by use of a single YVO4 crystal with a Nd concentration of 0.3 at.%. In Q-switched operation 2 I-W of average power at a pulse repetition rate of 100 kHz and similar to 1.1-m pulse energy at a pulse repetition rate of 10 kHz were produced. |
URI: | http://hdl.handle.net/11536/19245 http://dx.doi.org/10.1117/12.382755 |
ISBN: | 0-8194-3546-5 |
ISSN: | 0277-786X |
DOI: | 10.1117/12.382755 |
期刊: | SOLID STATE LASERS IX |
Volume: | 3929 |
起始頁: | 116 |
結束頁: | 121 |
顯示於類別: | 會議論文 |