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dc.contributor.authorChen, Hsin-Chuen_US
dc.contributor.authorLin, Chien-Chungen_US
dc.contributor.authorHan, Hao-Weien_US
dc.contributor.authorTsai, Yu-Linen_US
dc.contributor.authorChang, Chia-Huaen_US
dc.contributor.authorWang, Hsun-Wenen_US
dc.contributor.authorTsai, Min-Anen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorYu, Peichenen_US
dc.date.accessioned2014-12-08T15:27:03Z-
dc.date.available2014-12-08T15:27:03Z-
dc.date.issued2011-09-12en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://hdl.handle.net/11536/19259-
dc.description.abstractThe enhanced efficiency of the crystalline silicon (c-Si) solar cell with nanopillar arrays (NPAs) was demonstrated by deployment of CdS quantum dots (QDs). The NPAs was fabricated by the colloidal lithography and reactive-ion etching techniques. Under a simulated one-sun condition, the device with CdS QDs shows a 33% improvement of power conversion efficiency, compared with the one without QDs. For further investigation, the excitation spectrum of photoluminescence (PL), absorbance spectrum, current-voltage (I-V) characteristics, reflectance and external quantum efficiency of the device was measured and analyzed. It is noteworthy that the enhancement of efficiency could be attributed to the photon down-conversion, the antireflection, and the improved electrical property. (C) 2011 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleEnhanced efficiency for c-Si solar cell with nanopillar array via quantum dots layersen_US
dc.typeArticleen_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume19en_US
dc.citation.issue19en_US
dc.citation.spageA1141en_US
dc.citation.epageA1147en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000294781200014-
dc.citation.woscount32-
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