The performance limiting factors as RF MOSFETs scaling down

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DC 欄位	值	語言
dc.contributor.author	Wu, YH	en_US
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Liang, CS	en_US
dc.contributor.author	Wu, CC	en_US
dc.date.accessioned	2014-12-08T15:27:03Z	-
dc.date.available	2014-12-08T15:27:03Z	-
dc.date.issued	2000	en_US
dc.identifier.isbn	0-7803-6281-0	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19272	-
dc.identifier.uri	http://dx.doi.org/10.1109/RFIC.2000.854437	en_US
dc.description.abstract	The measured RF performance of 0.5, 0.25, and 0.18 mum MOSFETs gradually saturates as scaling down, which can be explained by the derived analytical equation and simulation. The overlap C-gd and non-quasi-static effect are the main factors but scales much slower than L-g.	en_US
dc.language.iso	en_US	en_US
dc.title	The performance limiting factors as RF MOSFETs scaling down	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/RFIC.2000.854437	en_US
dc.identifier.journal	2000 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS	en_US
dc.citation.spage	151	en_US
dc.citation.epage	154	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000165927800034	-
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