完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wu, LK | en_US |
dc.contributor.author | Tseng, BC | en_US |
dc.contributor.author | Liao, LC | en_US |
dc.date.accessioned | 2014-12-08T15:27:03Z | - |
dc.date.available | 2014-12-08T15:27:03Z | - |
dc.date.issued | 2000 | en_US |
dc.identifier.isbn | 0-8194-4025-6 | en_US |
dc.identifier.issn | 0277-786X | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/19274 | - |
dc.description.abstract | Integral passives technology has the potential for achieving denser packaging, more efficient manufacturing processes, better reliability and future replacement of many surface mount devices which will result in savings of volume, mass and cost To improve the circuit performance and obtain greater benefits of the integral passives, multi-dielectric substrates with layer-specific dielectric constant and thickness can be used to design the integral passives. With these different material characteristics we design various integral capacitors in a 6-layer printed wiring boards and then extract various circuit parameters associate with the frequency-dependent equivalent circuit models. From which a comparison between the experimentally measured characteristics and the simulated results of an RF amplifier will be demonstrated. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | integral passives | en_US |
dc.subject | multi-layer printed wiring boards | en_US |
dc.subject | dielectric constant | en_US |
dc.subject | loss tangent | en_US |
dc.title | Integral passives in multi-dielectric substrate | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2000 INTERNATIONAL SYMPOSIUM ON MICROELECTRONICS | en_US |
dc.citation.volume | 4339 | en_US |
dc.citation.spage | 484 | en_US |
dc.citation.epage | 488 | en_US |
dc.contributor.department | 電信工程研究所 | zh_TW |
dc.contributor.department | Institute of Communications Engineering | en_US |
dc.identifier.wosnumber | WOS:000167740800083 | - |
顯示於類別: | 會議論文 |