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dc.contributor.authorTai, YLen_US
dc.contributor.authorTsai, MSen_US
dc.contributor.authorTung, ICen_US
dc.contributor.authorDai, BTen_US
dc.contributor.authorFeng, MSen_US
dc.date.accessioned2014-12-08T15:27:05Z-
dc.date.available2014-12-08T15:27:05Z-
dc.date.issued2000en_US
dc.identifier.isbn1-56677-229-Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/19308-
dc.description.abstractIn this study the polyimide CMP was explored for its feasibility on the IMD planarization applications. Polishing polyimide was carried out before its final curing, and the removal rates were found to be strongly dependent upon the imidization degree of polyimide and the hydroxyl activity in the slurry. TMAH, tetra-methyl-ammonium hydroxide, added into the slurry is not only a strong base, but also a wetting agent to improve the surface wettability on the hydrophobic polyimide surface. The surface damages, such as roughness and scratches, moisture uptake and mobile ions contamination of the polished polyimide were characterized for their influence on the insulating properties, like dielectric constant, leakage current, electrical breakdown. It was demonstrated that directly polyimide CMP would not deteriorate the dielectric properties.en_US
dc.language.isoen_USen_US
dc.titleStudy on chemical-mechanical polishing of low dielectric constant polyimide thin filmsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalLOW AND HIGH DIELECTRIC CONSTANT MATERIALS: MATERIALS SCIENCE, PROCESSING, AND RELIABILITY ISSUES AND THIN FILM MATERIALS FOR ADVANCED PACKAGING TECHNOLOGIESen_US
dc.citation.volume99en_US
dc.citation.issue7en_US
dc.citation.spage15en_US
dc.citation.epage23en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000086691800002-
Appears in Collections:Conferences Paper