| Title: | KINETICS OF COMPOSITIONAL DISORDERING OF ALGAAS/GAAS QUANTUM-WELLS INDUCED BY LAW-TEMPERATURE GROWN GAAS |
| Authors: | TSANG, JS LEE, CP LEE, SH TSAI, KL CHEN, HR 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| Issue Date: | 1-May-1995 |
| URI: | http://dx.doi.org/10.1063/1.359453 http://hdl.handle.net/11536/1931 |
| ISSN: | 0021-8979 |
| DOI: | 10.1063/1.359453 |
| Journal: | JOURNAL OF APPLIED PHYSICS |
| Volume: | 77 |
| Issue: | 9 |
| Begin Page: | 4302 |
| End Page: | 4306 |
| Appears in Collections: | Articles |
- COMPOSITIONAL DISORDERING OF ALGAAS/GAAS SUPERLATTICES BY USING THE LOW-TEMPERATURE-GROWN GAAS / TSANG, JS;LEE, CP;FAN, JC;TSAI, KL;CHEN, HR
- STRONG ENHANCEMENT OF THE OPTICAL AND ELECTRICAL-PROPERTIES, AND SPONTANEOUS FORMATION OF AN ORDERED SUPERLATTICE IN (111)B ALGAAS / CHIN, A;LIN, HY;HSIEH, KY
- High quality Al(Ga)As/GaAs/Al(Ga)As quantum wells grown on (111)A GaAs substrates / Chin, A;Lee, K
- High quality Al(Ga)As/GaAs/Al(Ga)As quantum wells grown on (111)A GaAs substrates / Chin, A;Lee, K
- Compositional disordering of InGaAs/GaAs heterostructures by low-temperature-grown GaAs layers / Tsang, JS;Lee, CP;Lee, SH;Tsai, KL;Tsai, CM
Loading...