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dc.contributor.authorLee, CKen_US
dc.contributor.authorKao, FJen_US
dc.contributor.authorWang, SCen_US
dc.contributor.authorPan, CLen_US
dc.date.accessioned2014-12-08T15:27:06Z-
dc.date.available2014-12-08T15:27:06Z-
dc.date.issued2000en_US
dc.identifier.isbn4-900526-13-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/19324-
dc.description.abstractIn this study, optical emission from the undoped GaN epilayer sample was characterized using confocal micro-spectroscopy. A femtosecond laser was used to excite the sample. As the laser wavelength tuned from 762-796nm, the sample emitted a corresponding second harmonic signal from 381-398nm with a quadratic power dependence. A strong signal at 367nm resulted from a three-photon process with cubic power dependence was simultaneously observed for the first time.en_US
dc.language.isoen_USen_US
dc.subjectGallium nitrideen_US
dc.subjectthree-photon excitationen_US
dc.subjectsecond harmonic generation (SHG)en_US
dc.subjectconfocal microscopyen_US
dc.titleObservation of second harmonic emission and three-photon fluorescence from Gallium-Nitrideen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORSen_US
dc.citation.volume1en_US
dc.citation.spage655en_US
dc.citation.epage656en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000171608500167-
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