EFFECTS OF PRESSURE ON THE FORMATION OF PHOSPHORUS-DOPED MICROCRYSTALLINE SILICON FILMS DEPOSITED BY RADIO-FREQUENCY GLOW-DISCHARGE

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	FENG, MS	en_US
dc.contributor.author	LIANG, CW	en_US
dc.date.accessioned	2014-12-08T15:03:23Z	-
dc.date.available	2014-12-08T15:03:23Z	-
dc.date.issued	1995-05-01	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.359413	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1933	-
dc.language.iso	en_US	en_US
dc.title	EFFECTS OF PRESSURE ON THE FORMATION OF PHOSPHORUS-DOPED MICROCRYSTALLINE SILICON FILMS DEPOSITED BY RADIO-FREQUENCY GLOW-DISCHARGE	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.359413	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	77	en_US
dc.citation.issue	9	en_US
dc.citation.spage	4771	en_US
dc.citation.epage	4776	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	奈米中心	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	Nano Facility Center	en_US
dc.identifier.wosnumber	WOS:A1995QV47900081	-
dc.citation.woscount	10	-
顯示於類別：	期刊論文