完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChang, KMen_US
dc.contributor.authorYang, JYen_US
dc.contributor.authorChang, YHen_US
dc.date.accessioned2014-12-08T15:27:08Z-
dc.date.available2014-12-08T15:27:08Z-
dc.date.issued1999en_US
dc.identifier.isbn1-55899-472-6en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://hdl.handle.net/11536/19376-
dc.description.abstractThe oxygen plasma via resists strip process cause significant damage to organic SOP, thus limiting its inter-level dielectric application. A simple treatment technology using reactive ion is proposed to reform the SOP surface. The reactive ion modification of the SOP can improve the resistance towards oxygen plasma. This is owing to the carbon atom absence in the SOP's surface area. The measurements of Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS), stress, thickness variation, Scanning Electron Microscope (SEM) cross-sectional view for gap filling and dielectric constant show that SOP with reactive ion treatment (RIT) has better quality for non-etch-back process than SOP without RIT.en_US
dc.language.isoen_USen_US
dc.titleA pretreatment technique to improvement the ashing resistance of low k spin-on-polymer (SOP)en_US
dc.typeProceedings Paperen_US
dc.identifier.journalLOW-DIELECTRIC CONSTANT MATERIALS Ven_US
dc.citation.volume565en_US
dc.citation.spage217en_US
dc.citation.epage225en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000085482500026-
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