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dc.contributor.authorLee, TDen_US
dc.contributor.authorCheng, PHen_US
dc.contributor.authorPan, JSen_US
dc.contributor.authorTai, Ken_US
dc.contributor.authorLai, Yen_US
dc.contributor.authorHuang, KFen_US
dc.date.accessioned2014-12-08T15:27:09Z-
dc.date.available2014-12-08T15:27:09Z-
dc.date.issued1999en_US
dc.identifier.isbn0-8194-3501-5en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/19384-
dc.identifier.urihttp://dx.doi.org/10.1117/12.369400en_US
dc.description.abstractWe have successfully fabricated optically pumped semiconductor micro-disk and micro-ring lasers under the InGaAsP/InGaAs system at the 1.5 mu m wavelength and under the InGaP/InGaAlP system at the 0.66 mu m wavelength. The spontaneous emission factor beta of these micro-lasers is estimated directly from their output-pump curves and its dependence on the cavity volume is verified. Interesting phenomena regarding the far-field emission pattern and lasing linewidth of these micro-cavity lasers are experimentally observed and theoretically studied.en_US
dc.language.isoen_USen_US
dc.subjectmicro-cavity laseren_US
dc.subjectmicro-disk laseren_US
dc.subjectmicro-ring laseren_US
dc.titleMode emission properties of semiconductor micro-disk and micro-ring lasersen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1117/12.369400en_US
dc.identifier.journalPHOTONICS TECHNOLOGY INTO THE 21ST CENTURY: SEMICONDUCTORS, MICROSTRUCTURES, AND NANOSTRUCTURESen_US
dc.citation.volume3899en_US
dc.citation.spage215en_US
dc.citation.epage223en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000084512600026-
Appears in Collections:Conferences Paper


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