Mode emission properties of semiconductor micro-disk and micro-ring lasers

doi:10.1117/12.369400

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lee, TD	en_US
dc.contributor.author	Cheng, PH	en_US
dc.contributor.author	Pan, JS	en_US
dc.contributor.author	Tai, K	en_US
dc.contributor.author	Lai, Y	en_US
dc.contributor.author	Huang, KF	en_US
dc.date.accessioned	2014-12-08T15:27:09Z	-
dc.date.available	2014-12-08T15:27:09Z	-
dc.date.issued	1999	en_US
dc.identifier.isbn	0-8194-3501-5	en_US
dc.identifier.issn	0277-786X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19384	-
dc.identifier.uri	http://dx.doi.org/10.1117/12.369400	en_US
dc.description.abstract	We have successfully fabricated optically pumped semiconductor micro-disk and micro-ring lasers under the InGaAsP/InGaAs system at the 1.5 mu m wavelength and under the InGaP/InGaAlP system at the 0.66 mu m wavelength. The spontaneous emission factor beta of these micro-lasers is estimated directly from their output-pump curves and its dependence on the cavity volume is verified. Interesting phenomena regarding the far-field emission pattern and lasing linewidth of these micro-cavity lasers are experimentally observed and theoretically studied.	en_US
dc.language.iso	en_US	en_US
dc.subject	micro-cavity laser	en_US
dc.subject	micro-disk laser	en_US
dc.subject	micro-ring laser	en_US
dc.title	Mode emission properties of semiconductor micro-disk and micro-ring lasers	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1117/12.369400	en_US
dc.identifier.journal	PHOTONICS TECHNOLOGY INTO THE 21ST CENTURY: SEMICONDUCTORS, MICROSTRUCTURES, AND NANOSTRUCTURES	en_US
dc.citation.volume	3899	en_US
dc.citation.spage	215	en_US
dc.citation.epage	223	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000084512600026	-
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