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dc.contributor.authorThu, L. M.en_US
dc.contributor.authorVoskoboynikov, O.en_US
dc.date.accessioned2014-12-08T15:27:10Z-
dc.date.available2014-12-08T15:27:10Z-
dc.date.issued2010en_US
dc.identifier.issn1742-6588en_US
dc.identifier.urihttp://hdl.handle.net/11536/19403-
dc.identifier.urihttp://dx.doi.org/10.1088/1742-6596/245/1/012070en_US
dc.description.abstractWe theoretically study optical response of InAs/GaAs quantum dot multilayered structures. Based on the multi-scale hybrid discrete-continuum description the optical response of an isolated layer of embedded quantum dots has been determined. Using the propagation-matrix approach we express the amplitudes of incident, reflected and transmitted electromagnetic waves in a multilayered structure by the reflection and transmission coefficients of the isolated layers. We study the overall reflectance and transmittance dependencies on the number of layers and distance between consecutive layers. The increase of the number of the layers considerably enhances the overall reflectance of the structures. Interference effects become significant for certain distances between layers in the structures.en_US
dc.language.isoen_USen_US
dc.titleOptical response of quantum dot multilayer structuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/1742-6596/245/1/012070en_US
dc.identifier.journalQUANTUM DOTS 2010en_US
dc.citation.volume245en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000294907400070-
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