High-Performance and Highly Durable Inverted Organic Photovoltaics Embedding Solution-Processable Vanadium Oxides as an Interfacial Hole-Transporting Layer

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DC 欄位	值	語言
dc.contributor.author	Chen, Chih-Ping	en_US
dc.contributor.author	Chen, Yeu-Ding	en_US
dc.contributor.author	Chuang, Shih-Ching	en_US
dc.date.accessioned	2014-12-08T15:27:13Z	-
dc.date.available	2014-12-08T15:27:13Z	-
dc.date.issued	2011-09-01	en_US
dc.identifier.issn	0935-9648	en_US
dc.identifier.uri	http://dx.doi.org/10.1002/adma.201102142	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19448	-
dc.description.abstract	Inverted OPV devices based on sol-gel derived vanadium oxides (VO(x)) as an interfacial layer are demonstrated. The VO(x) shows excellent characteristics as a hole-transporting and protecting layer. The constructed devices exhibit enhanced performance with the studied polymers and are highly durable under accelerated conditions for long time periods.	en_US
dc.language.iso	en_US	en_US
dc.title	High-Performance and Highly Durable Inverted Organic Photovoltaics Embedding Solution-Processable Vanadium Oxides as an Interfacial Hole-Transporting Layer	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1002/adma.201102142	en_US
dc.identifier.journal	ADVANCED MATERIALS	en_US
dc.citation.volume	23	en_US
dc.citation.issue	33	en_US
dc.citation.spage	3859	en_US
dc.citation.epage	+	en_US
dc.contributor.department	應用化學系	zh_TW
dc.contributor.department	Department of Applied Chemistry	en_US
dc.identifier.wosnumber	WOS:000295200400019	-
dc.citation.woscount	73	-
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