Resistive switching characteristics of Sm(2)O(3) thin films for nonvolatile memory applications

doi:10.1016/j.sse.2011.04.012

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Huang, Sheng-Yao	en_US
dc.contributor.author	Chang, Ting-Chang	en_US
dc.contributor.author	Chen, Min-Chen	en_US
dc.contributor.author	Chen, Shih-Ching	en_US
dc.contributor.author	Lo, Hung-Ping	en_US
dc.contributor.author	Huang, Hui-Chun	en_US
dc.contributor.author	Gan, Der-Shin	en_US
dc.contributor.author	Sze, Simon M.	en_US
dc.contributor.author	Tsai, Ming-Jinn	en_US
dc.date.accessioned	2014-12-08T15:27:14Z	-
dc.date.available	2014-12-08T15:27:14Z	-
dc.date.issued	2011-09-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.sse.2011.04.012	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19459	-
dc.description.abstract	This study investigates a sputtered Sm(2)O(3) thin film to apply into a resistive random access memory device. The proposed device exhibits a stable resistance ratio of about 2.5 orders after 10(4) cycling bias pulses and no degradation for retention characteristics monitored after an endurance test at 85 degrees C. The conduction mechanisms for low and high resistance states are dominated by ohmic behavior and trapcontrolled space charge limited current, respectively. The resistance switching is ascribed to the formation/rupture of conductive filaments. (C) 2011 Elsevier Ltd. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.title	Resistive switching characteristics of Sm(2)O(3) thin films for nonvolatile memory applications	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.sse.2011.04.012	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	63	en_US
dc.citation.issue	1	en_US
dc.citation.spage	189	en_US
dc.citation.epage	191	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
顯示於類別：	期刊論文