標題: The effects of isoelectronic in-doping in GaN films grown by MOCVD
作者: Shu, CK
Ou, J
Lin, HC
Pan, YC
Lee, WH
Chen, WK
Lee, MC
電子物理學系
Department of Electrophysics
公開日期: 1998
摘要: The isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition (MOCVD) was investigated by using Raman scattering, scanning electron microscopy (SEM), Hall, Xray and photoluminescence (PL) measurements. In our study, after incorporating small amounts of In atoms into GaN compound (less than 0.4%, thus no alloy), SEM pictures showed improved surface smoothness with greatly reduced nano-pits, which was also confirmed by the multiple interference effects in PL spectra. Doping of adequate quantity caused the reduction of yellow luminescence and unintentional background concentration, and the line width shrinkage in X-ray, PL and Raman data, and the enhanced mobility. The improved crystalline and optical qualities of GaN:In films may be attributed to the decrease in dislocation density that may be related to the "impurity softening" phenomena.
URI: http://hdl.handle.net/11536/19501
ISBN: 4-274-90245-5
期刊: BLUE LASER AND LIGHT EMITTING DIODES II
起始頁: 52
結束頁: 55
Appears in Collections:Conferences Paper