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dc.contributor.authorSun, SCen_US
dc.contributor.authorChiang, YCen_US
dc.contributor.authorRosenmayer, CTen_US
dc.contributor.authorTeguh, Jen_US
dc.contributor.authorWu, Hen_US
dc.date.accessioned2014-12-08T15:27:23Z-
dc.date.available2014-12-08T15:27:23Z-
dc.date.issued1997en_US
dc.identifier.isbn1-55899-347-9en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://hdl.handle.net/11536/19636-
dc.description.abstractPolytetrafluoroethylene (PTFE) has been studied as a low dielectric constant material for ULSI. A novel nanoparticle dispersion of PTFE was developed that permits the spin-coat deposition of PTFE with a thickness range of 0.2 to 1.5 mu m. These PTFE nanoemulsions are aqueous emulsions containing sub-50 nm size PTFE particles and surfactant that are thermodynamically stable, optically clear, and have low viscosity and surface tension. The films cast from this nanoemulsion are uniform in thickness with a standard deviation of < 2%. From FTIR spectra, significant amounts of C-F bonds (1153 cm(-1) and 1211 cm(-1)) are detected in the films. The index of refraction from ellipsometry measurement is about 1.35 and the dielectric constant measured from high frequency C-V curves is about 1.85. The dielectric strength is about 170 V/mu m. TGA data indicates a weight loss rate of less than 0.25%/hr. at 425 degrees C. The moisture absorption is less than 0.01%. After sintering, the films are extremely resistant to chemical attack by sulfuric acid, buffered HF, and positive photoresist developer. The etch rate in an oxygen plasma at 30 W is around 200 nm/min. Stud pull tests indicate good adhesion to SiO2, Al, and Cu. Results of thermal, dielectric, chemical, and adhesion tests indicate that these PTFE films have potential for use as an integrated circuit dielectric material.en_US
dc.language.isoen_USen_US
dc.titleEvaluation of PTFE nanoemulsion as a low dielectric constant material ILDen_US
dc.typeProceedings Paperen_US
dc.identifier.journalLOW-DIELECTRIC CONSTANT MATERIALS IIen_US
dc.citation.volume443en_US
dc.citation.spage85en_US
dc.citation.epage90en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentNano Facility Centeren_US
dc.identifier.wosnumberWOS:A1997BJ57H00010-
Appears in Collections:Conferences Paper