Anisotropy light extraction with high polarization ratio from photonic crystal fight-emitting diodes

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lai, Chun-Feng	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Lu, Tien-Chang	en_US
dc.contributor.author	Wang, Shing-Chang	en_US
dc.contributor.author	Chao, C. H.	en_US
dc.contributor.author	Hsueh, H. T.	en_US
dc.contributor.author	Wang, J-F. T.	en_US
dc.contributor.author	Yeh, W. Y.	en_US
dc.contributor.author	Chi, J. Y.	en_US
dc.date.accessioned	2014-12-08T15:03:25Z	-
dc.date.available	2014-12-08T15:03:25Z	-
dc.date.issued	2008	en_US
dc.identifier.isbn	978-1-55752-859-9	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1963	-
dc.description.abstract	The azimuthal anisotropy of GaN photonic crystal light-emitting diode is investigated using an annular structure. The extracted light distribution has P/S ratio of 5.5 for fight propagating in Gamma X direction and 2.1 for Gamma M direction. @2007 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Anisotropy light extraction with high polarization ratio from photonic crystal fight-emitting diodes	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9	en_US
dc.citation.spage	1019	en_US
dc.citation.epage	1020	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000260498400511	-
顯示於類別：	會議論文