In-situ O-2-plasma passivation effect on poly-Si TFTs during ion plating capping oxide

Abstract

A novel method has been developed to effectively reduce defect density in poly-Si thin-film transistors (TFTs) using ion plating (IF) oxides as capping layers. The characteristics of TFTs with TP capping oxides are superior to those of TFTs with TEOS capping oxides due to the in-situ O-2-plasma passivation effect during IP oxide deposition. The hydrogenation effect on the novel devices is not very evident because their trap-state density has been reduced by O-2 plasma. poly-Si TFTs with IP capping oxides still maintain good performance even stressing at 100 degrees C with a bias of 20 V.