完整後設資料紀錄
DC 欄位語言
dc.contributor.authorYeh, CFen_US
dc.contributor.authorChen, TJen_US
dc.contributor.authorJeng, JNen_US
dc.date.accessioned2014-12-08T15:27:24Z-
dc.date.available2014-12-08T15:27:24Z-
dc.date.issued1997en_US
dc.identifier.isbn1-56677-173-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/19652-
dc.description.abstractLiquid-phase deposited (LPD) oxide has been successfully applied as gate insulator to low-temperature processed polysilicon thin-film transistors (poly-Si TFTs). This paper assesses the feasibility of applying LPD oxide to high-temperature processed (HTP) TFTs. The high-temperature treatments like gate-oxide annealing and dopant activation provide excellent improvement in the characteristics of poly-Si TFTs with LPD gate oxides. These high-temperature treated devices show effective hydrogenation using the NH3 plasma treatment. The results imply that novel LPD gate oxide technologies can lead to replacement of thermal gate oxide with HTP poly Si TFTs. The reliability of HTP poly-Si TFTs with LPD gate oxides was also investigated.en_US
dc.language.isoen_USen_US
dc.titleEffect of processing temperature on polysilicon thin-film transistors with liquid-phase deposited oxide as gate insulatoren_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF THE THIRD SYMPOSIUM ON THIN FILM TRANSISTOR TECHNOLOGIESen_US
dc.citation.volume96en_US
dc.citation.issue23en_US
dc.citation.spage89en_US
dc.citation.epage94en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1997BH10T00011-
顯示於類別:會議論文