FOURIER-TRANSFORM INFRARED SPECTROSCOPIC STUDY OF OXIDE-FILMS GROWN IN PURE N2O

doi:10.1143/JJAP.34.2370

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHAO, TS	en_US
dc.contributor.author	CHEN, WH	en_US
dc.contributor.author	LEI, TF	en_US
dc.date.accessioned	2014-12-08T15:03:25Z	-
dc.date.available	2014-12-08T15:03:25Z	-
dc.date.issued	1995-05-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.34.2370	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1966	-
dc.description.abstract	The properties of the oxide films grown by pure N2O were studied in this work. A two-layer model, considering a N2O oxide with an oxy-nitride film at the interface, was used to describe the dependence of the main peak shift in a Fourier transform infrared (FTIR) spectrum on N2O thicknesses. The thickness of interfacial layer was determined by FTIR and multiple-angle incident ellipsometer. Both methods showed consistent results and the thickness of this layer is found to be 14-16 Angstrom.	en_US
dc.language.iso	en_US	en_US
dc.subject	FTIR	en_US
dc.subject	N2O	en_US
dc.subject	OXIDE	en_US
dc.subject	ELLIPSOMETER	en_US
dc.title	FOURIER-TRANSFORM INFRARED SPECTROSCOPIC STUDY OF OXIDE-FILMS GROWN IN PURE N2O	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1143/JJAP.34.2370	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS	en_US
dc.citation.volume	34	en_US
dc.citation.issue	5A	en_US
dc.citation.spage	2370	en_US
dc.citation.epage	2373	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995RF66200032	-
dc.citation.woscount	11	-
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