A 78 similar to 102 GHz Front-End Receiver in 90 nm CMOS Technology

doi:10.1109/LMWC.2011.2162940

Full metadata record

DC Field	Value	Language
dc.contributor.author	Su, Hsuan-Yi	en_US
dc.contributor.author	Hu, Robert	en_US
dc.contributor.author	Wu, Chung-Yu	en_US
dc.date.accessioned	2014-12-08T15:27:25Z	-
dc.date.available	2014-12-08T15:27:25Z	-
dc.date.issued	2011-09-01	en_US
dc.identifier.issn	1531-1309	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LMWC.2011.2162940	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19670	-
dc.description.abstract	In this letter, a 78 similar to 102 GHz front-end receiver designed in 90 nm CMOS technology is presented. It consists of an ultra-wideband low-noise amplifier, a subharmonic mixer, and an IF buffer. This receiver has a peak gain of 11.8 dB at 94 GHz with the noise figure of 13.4 dB. The measured input-referred 1 dB compression point is -14.5 dBm and the total power dissipation is 18.6 mW. The chip size is 680 x 1020 mu m(2).	en_US
dc.language.iso	en_US	en_US
dc.subject	CMOS receiver	en_US
dc.subject	low noise amplifier (LNA)	en_US
dc.subject	subharmonic mixer	en_US
dc.subject	ultra wideband (UWB)	en_US
dc.subject	W-band	en_US
dc.title	A 78 similar to 102 GHz Front-End Receiver in 90 nm CMOS Technology	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LMWC.2011.2162940	en_US
dc.identifier.journal	IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS	en_US
dc.citation.volume	21	en_US
dc.citation.issue	9	en_US
dc.citation.spage	489	en_US
dc.citation.epage	491	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000294670900013	-
dc.citation.woscount	2	-
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