Gate-All-Around Poly-Si TFTs With Single-Crystal-Like Nanowire Channels

標題:	Gate-All-Around Poly-Si TFTs With Single-Crystal-Like Nanowire Channels
作者:	Kang, Tsung-Kuei Liao, Ta-Chuan Lin, Chia-Min Liu, Han-Wen Wang, Fang-Hsing Cheng, Huang-Chung 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	Field-effect mobility;gate-all-around (GAA);nanowire (NW);nitride spacer;sequential lateral solidification (SLS);single-crystalline-like
公開日期:	1-九月-2011
摘要:	The gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with single-crystal-like nanowire (NW) channels (SCLNCs) are demonstrated and characterized. Via the nanoscale nitride spacer, the Si NW can be easily transformed within one crystalline grain of the two-shot sequential-lateral-solidification poly-Si film. As compared with the planar ones, the GAA-SCLNC TFTs showed more excellent characteristics. The results clearly show that the variations of device characteristics can be reduced by increasing the numbers of NWs in the channels and an average mobility above 410 cm(2)/V . s with a low standard deviation can be achieved for the GAA-SCLNC TFTs with 20-NW channels.
URI:	http://dx.doi.org/10.1109/LED.2011.2160146 http://hdl.handle.net/11536/19737
ISSN:	0741-3106
DOI:	10.1109/LED.2011.2160146
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	32
Issue:	9
起始頁:	1239
結束頁:	1241
顯示於類別：	期刊論文

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