AlGaN/GaN Multiple Quantum Wells Grown By Atomic Layer Deposition

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lo, M. H.	en_US
dc.contributor.author	Chen, S. W.	en_US
dc.contributor.author	Li, Z. Y.	en_US
dc.contributor.author	Lu, T. C.	en_US
dc.contributor.author	Kuo, H. C.	en_US
dc.contributor.author	Wang, S. C.	en_US
dc.date.accessioned	2014-12-08T15:03:26Z	-
dc.date.available	2014-12-08T15:03:26Z	-
dc.date.issued	2008	en_US
dc.identifier.isbn	978-1-55752-859-9	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1974	-
dc.description.abstract	Three-pair AlGaN/GaN multiple quantum well structure with superlattice was grown using metal-organic chemical vapor deposition system. The AlGaN barrier and GaN well of the MQW were grown by atmoic layer deposition and conventional growth, respectively. (C) 2008 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	AlGaN/GaN Multiple Quantum Wells Grown By Atomic Layer Deposition	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9	en_US
dc.citation.spage	1059	en_US
dc.citation.epage	1060	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000260498400531	-
顯示於類別：	會議論文