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dc.contributor.authorTzuang, CKCen_US
dc.contributor.authorLin, CCen_US
dc.date.accessioned2014-12-08T15:27:34Z-
dc.date.available2014-12-08T15:27:34Z-
dc.date.issued1996en_US
dc.identifier.isbn0-8194-2230-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/19815-
dc.description.abstractThis paper presents the latest result of applying the microstrip's leaky mode for a millimeter-wave active integrated antenna design. In contrast to the use of the first higher-order leaky mode, the second higher-order leaky mode of even symmetry is employed in the new approach, which allows larger dimension for leaky-wave antenna design and thereby reduces its performance sensitivity to the photolithographic tolerance. The new active integrated antenna operating at frequency about 34 GHz comprises of a microstrip and a coplanar waveguide stacked on top of each other, named as the millimeter wave micro-CPW integrated antenna. The feed is through the CPW that would be connected to the active uniplanar millimeter-wave (M)MIC's. Our experimental and theoretical investigations on the new integrated antenna show good input matching characteristics for such a highly directed leaky-wave antenna with the first-pass success.en_US
dc.language.isoen_USen_US
dc.subjectmillimeter-waveen_US
dc.subjectmicro-CPWen_US
dc.subjectsecond higher-order leaky modeen_US
dc.subjectleaky-wave antennaen_US
dc.subjectphotolithographyen_US
dc.titleMillimeter wave micro-CPW integrated antennaen_US
dc.typeProceedings Paperen_US
dc.identifier.journalMILLIMETER AND SUBMILLIMETER WAVES IIIen_US
dc.citation.volume2842en_US
dc.citation.spage513en_US
dc.citation.epage518en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:A1996BG93T00058-
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