Polycrystalline beta-SiC film growth on Si by ECR-CVD at 178-500 degrees C

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Cheng, KL	en_US
dc.contributor.author	Liu, CC	en_US
dc.contributor.author	Fu, CM	en_US
dc.contributor.author	Cheng, HC	en_US
dc.contributor.author	Lee, C	en_US
dc.contributor.author	Yew, TR	en_US
dc.date.accessioned	2014-12-08T15:27:35Z	-
dc.date.available	2014-12-08T15:27:35Z	-
dc.date.issued	1996	en_US
dc.identifier.isbn	1-55899-306-1	en_US
dc.identifier.issn	0272-9172	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19826	-
dc.language.iso	en_US	en_US
dc.title	Polycrystalline beta-SiC film growth on Si by ECR-CVD at 178-500 degrees C	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	POLYCRYSTALLINE THIN FILMS: STRUCTURE, TEXTURE, PROPERTIES, AND APPLICATIONS II	en_US
dc.citation.volume	403	en_US
dc.citation.spage	271	en_US
dc.citation.epage	275	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1996BG51T00041	-
顯示於類別：	會議論文