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dc.contributor.authorLEE, YSen_US
dc.contributor.authorTSENG, TYen_US
dc.date.accessioned2014-12-08T15:03:27Z-
dc.date.available2014-12-08T15:03:27Z-
dc.date.issued1995-04-01en_US
dc.identifier.issn0957-4522en_US
dc.identifier.urihttp://dx.doi.org/10.1007/BF00188190en_US
dc.identifier.urihttp://hdl.handle.net/11536/1987-
dc.description.abstractMultilayer-chip varistors based on ZnO with lead zinc borosilicate glass instead of Bi2O3 were prepared by tape casting and green-sheet lamination processes using a non-aqueous slurry system. The influences of slurry composition and the degassing process on the microstructure and non-ohmic properties of multilayer-chip varistors were studied. The electrical properties of chip varistors can be influenced substantially by the pore defects resulting from an unsuitable slurry formulation for the tape-casting process. The sintering temperature of the chip varistors was lowered to 1100 degrees C and silver-palladium alloys were employed as internal electrodes. The non-linear coefficients of 27-32 and breakdown voltages of 7.6-24.5 V were achieved by controlling the green-sheet thickness and sintering temperatures in the present study. The Delta V-br/V-br values for the chip varistors lie within +/-10%, indicating excellent surge-withstanding capability.en_US
dc.language.isoen_USen_US
dc.titleINFLUENCE OF PROCESSING PARAMETERS ON THE MICROSTRUCTURE AND ELECTRICAL-PROPERTIES OF MULTILAYER-CHIP ZNO VARISTORSen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/BF00188190en_US
dc.identifier.journalJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICSen_US
dc.citation.volume6en_US
dc.citation.issue2en_US
dc.citation.spage90en_US
dc.citation.epage96en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1995RE02900005-
dc.citation.woscount13-
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