Luminescent properties of sol-gel prepared Y3Al5O12:Tb thin films

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lo, JR	en_US
dc.contributor.author	Tseng, TY	en_US
dc.contributor.author	Tyan, JH	en_US
dc.contributor.author	Huang, JCM	en_US
dc.date.accessioned	2014-12-08T15:27:38Z	-
dc.date.available	2014-12-08T15:27:38Z	-
dc.date.issued	1996	en_US
dc.identifier.isbn	0-7803-3594-5	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19901	-
dc.description.abstract	A series of Tb-activated Y3Al5O12 films have been fabricated by spin coating on silicon substrate with sol-gel solutions. The formation of a single garnet phase is observed at 800 degrees C for 1 h in rapid thermal annealing furnace. The emission spectrum of the films induced by ultraviolet(UV) and electron excitations show the D-5 to F-6 transition and consisted of two groups, D-5(3) to F-6(before 485nm) and D-5(4) to 6F(after 485nm). The emission intensities of the films are dependent on the Tb concentrations.	en_US
dc.language.iso	en_US	en_US
dc.title	Luminescent properties of sol-gel prepared Y3Al5O12:Tb thin films	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IVMC '96 - 9TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST	en_US
dc.citation.spage	197	en_US
dc.citation.epage	201	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1996BJ05U00046	-
顯示於類別：	會議論文