完整後設資料紀錄
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dc.contributor.authorKu, TKen_US
dc.contributor.authorChen, SHen_US
dc.contributor.authorYang, CDen_US
dc.contributor.authorShe, NJen_US
dc.contributor.authorTarntair, FGen_US
dc.contributor.authorWang, CCen_US
dc.contributor.authorChen, CFen_US
dc.contributor.authorHsieh, IJen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2014-12-08T15:27:38Z-
dc.date.available2014-12-08T15:27:38Z-
dc.date.issued1996en_US
dc.identifier.isbn0-7803-3594-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/19902-
dc.description.abstractIn order to take the advantages of diamond and carbon coating on flat-panel display, unscratched sharp Si microtip arrays have been carburized based on the bias enhanced nucleation (BEN) and low-pressure MPCVD deposition to obtain an ultra-sharp carburized Si FEAs. The tip radii of these BEN-carburized Si tips can be reduced below 300 Angstrom under low deposition temperature (<550 degrees C). Furthermore, some BEN-carburized samples were further deposited by normal diamond growth conditions to form the ultra-sharp DLC-clad Si FEAs with enhanced emission ability.en_US
dc.language.isoen_USen_US
dc.titleFabrication and characterization of various carbon-clad silicon microtips with ultra-small tip radii.en_US
dc.typeProceedings Paperen_US
dc.identifier.journalIVMC '96 - 9TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGESTen_US
dc.citation.spage329en_US
dc.citation.epage333en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996BJ05U00075-
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