Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ku, TK | en_US |
dc.contributor.author | Chen, SH | en_US |
dc.contributor.author | Yang, CD | en_US |
dc.contributor.author | She, NJ | en_US |
dc.contributor.author | Tarntair, FG | en_US |
dc.contributor.author | Wang, CC | en_US |
dc.contributor.author | Chen, CF | en_US |
dc.contributor.author | Hsieh, IJ | en_US |
dc.contributor.author | Cheng, HC | en_US |
dc.date.accessioned | 2014-12-08T15:27:38Z | - |
dc.date.available | 2014-12-08T15:27:38Z | - |
dc.date.issued | 1996 | en_US |
dc.identifier.isbn | 0-7803-3594-5 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/19902 | - |
dc.description.abstract | In order to take the advantages of diamond and carbon coating on flat-panel display, unscratched sharp Si microtip arrays have been carburized based on the bias enhanced nucleation (BEN) and low-pressure MPCVD deposition to obtain an ultra-sharp carburized Si FEAs. The tip radii of these BEN-carburized Si tips can be reduced below 300 Angstrom under low deposition temperature (<550 degrees C). Furthermore, some BEN-carburized samples were further deposited by normal diamond growth conditions to form the ultra-sharp DLC-clad Si FEAs with enhanced emission ability. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Fabrication and characterization of various carbon-clad silicon microtips with ultra-small tip radii. | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | IVMC '96 - 9TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST | en_US |
dc.citation.spage | 329 | en_US |
dc.citation.epage | 333 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:A1996BJ05U00075 | - |
Appears in Collections: | Conferences Paper |