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dc.contributor.authorLAI, CHen_US
dc.contributor.authorWENG, CTen_US
dc.contributor.authorTSENG, TYen_US
dc.date.accessioned2014-12-08T15:03:27Z-
dc.date.available2014-12-08T15:03:27Z-
dc.date.issued1995-04-01en_US
dc.identifier.issn0254-0584en_US
dc.identifier.urihttp://hdl.handle.net/11536/1990-
dc.description.abstractThe influences of Nd donors and Al2O3-SiO2-TiO2 (AST) sintering aids on the electrical properties of (Ba,Sr)TiO3 materials have been investigated. The room-temperature resistivity and the temperature coefficient of the anomalous resistivity rise were used to characterize the performance of the samples. From derivations based on the Heywang-Jonker barrier model, both characterizing parameters are expected to increase as a result of higher acceptor-state density at the grain boundary. The surface acceptor density, whose value was extracted from the slope in the Arrhenius plot of resistivity versus 1/(T epsilon(m)), where epsilon(m) is the measured permittivity and T the absolute temperature, was found to decrease with the Nd content and increase with the AST dopant. A satisfactory interpretation of the observed variations in resistivity-temperature curves caused by additions of various dopants was thus obtained in the light of the resultant acceptor state density.en_US
dc.language.isoen_USen_US
dc.subjectPOSITIVE TEMPERATURE COEFFICIENT OF RESISTANCEen_US
dc.subjectACCEPTOR STATE DENSITYen_US
dc.subjectGRAIN BOUNDARIESen_US
dc.subjectPERMITTIVITYen_US
dc.subjectBARRIERSen_US
dc.titleTHE EFFECTS OF ND2O3 ADDITIVES AND AL2O3-SIO2-TIO2 SINTERING AIDS ON THE ELECTRICAL-RESISTIVITY OF (BA,SR)TIO3 PTCR CERAMICSen_US
dc.typeArticleen_US
dc.identifier.journalMATERIALS CHEMISTRY AND PHYSICSen_US
dc.citation.volume40en_US
dc.citation.issue3en_US
dc.citation.spage168en_US
dc.citation.epage172en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1995RA33600003-
dc.citation.woscount6-
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