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dc.contributor.authorLin, PJen_US
dc.contributor.authorChen, MCen_US
dc.date.accessioned2014-12-08T15:27:40Z-
dc.date.available2014-12-08T15:27:40Z-
dc.date.issued1996en_US
dc.identifier.isbn1-56677-155-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/19927-
dc.description.abstractCopper chemical vapor deposition from Cu(hfac)TMVS was studied using an LPCVD system of a cold wall vertical reactor. It was found that the resistivity of the chemically vapor deposited Cu films was dependent on the film's microstructure and impurity content, which in turn were dependent on the deposition conditions. At a deposition temperature of 180 degrees C and with H-2 as the carrier gas, copper films with low impurity content can be deposited with low flow rate of H-2 at low deposition pressure, while copper films with a compact microstructure can be deposited at a condition of low pressure which ensures high supersaturation of active reactants' molecules(1). It turns out that copper films with the optimal resistivity can be deposited at a temperature of 180 degrees C and a pressure of 300 mTorr using H-2 as the carrier gas.en_US
dc.language.isoen_USen_US
dc.titleCVD Cu films deposited from Cu(hfac)TMVSen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF THE THIRTEENTH INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITIONen_US
dc.citation.volume96en_US
dc.citation.issue5en_US
dc.citation.spage787en_US
dc.citation.epage793en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996BJ91W00120-
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