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dc.contributor.authorTsai, T. Y.en_US
dc.contributor.authorLin, T. H.en_US
dc.contributor.authorSlowry, S.en_US
dc.contributor.authorLuo, C. W.en_US
dc.contributor.authorWu, K. H.en_US
dc.contributor.authorLin, J-Yen_US
dc.contributor.authorUen, T. M.en_US
dc.contributor.authorJuang, J. Y.en_US
dc.date.accessioned2014-12-08T15:27:43Z-
dc.date.available2014-12-08T15:27:43Z-
dc.date.issued2010en_US
dc.identifier.issn1742-6588en_US
dc.identifier.urihttp://hdl.handle.net/11536/19959-
dc.identifier.urihttp://dx.doi.org/10.1088/1742-6596/200/1/012210en_US
dc.description.abstractWe have successfully prepared the b-axis-oriented orthorhombic LuMnO(3) (LuMO) and HoMnO(3) (HMO) thin films by pulsed laser deposition on (110)-LaAlO(3) substrates. The nearly perfect alignment between the film growth orientation and the substrate allows us to study the magnetic transitions along the respective crystal orientation, which has displayed marked anisotropic behaviours. In particular, with the largest ionic size difference between Lu and Ho for the family of RMnO(3) displaying the E-type AFM, the effects of lattice distortion on the magnetic transition are compared.en_US
dc.language.isoen_USen_US
dc.titleMagnetic transition anisotropies in orthorhombic LuMnO(3) and HoMnO(3) multiferroic thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/1742-6596/200/1/012210en_US
dc.identifier.journalINTERNATIONAL CONFERENCE ON MAGNETISM (ICM 2009)en_US
dc.citation.volume200en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000291321301026-
Appears in Collections:Conferences Paper


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