Magnetic transition anisotropies in orthorhombic LuMnO(3) and HoMnO(3) multiferroic thin films

doi:10.1088/1742-6596/200/1/012210

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DC 欄位	值	語言
dc.contributor.author	Tsai, T. Y.	en_US
dc.contributor.author	Lin, T. H.	en_US
dc.contributor.author	Slowry, S.	en_US
dc.contributor.author	Luo, C. W.	en_US
dc.contributor.author	Wu, K. H.	en_US
dc.contributor.author	Lin, J-Y	en_US
dc.contributor.author	Uen, T. M.	en_US
dc.contributor.author	Juang, J. Y.	en_US
dc.date.accessioned	2014-12-08T15:27:43Z	-
dc.date.available	2014-12-08T15:27:43Z	-
dc.date.issued	2010	en_US
dc.identifier.issn	1742-6588	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19959	-
dc.identifier.uri	http://dx.doi.org/10.1088/1742-6596/200/1/012210	en_US
dc.description.abstract	We have successfully prepared the b-axis-oriented orthorhombic LuMnO(3) (LuMO) and HoMnO(3) (HMO) thin films by pulsed laser deposition on (110)-LaAlO(3) substrates. The nearly perfect alignment between the film growth orientation and the substrate allows us to study the magnetic transitions along the respective crystal orientation, which has displayed marked anisotropic behaviours. In particular, with the largest ionic size difference between Lu and Ho for the family of RMnO(3) displaying the E-type AFM, the effects of lattice distortion on the magnetic transition are compared.	en_US
dc.language.iso	en_US	en_US
dc.title	Magnetic transition anisotropies in orthorhombic LuMnO(3) and HoMnO(3) multiferroic thin films	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1088/1742-6596/200/1/012210	en_US
dc.identifier.journal	INTERNATIONAL CONFERENCE ON MAGNETISM (ICM 2009)	en_US
dc.citation.volume	200	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000291321301026	-
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