A comparative study of CVD TiN and CVD TaN diffusion barriers for copper interconnection

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Sun, SC	en_US
dc.contributor.author	Tsai, MH	en_US
dc.contributor.author	Chiu, HT	en_US
dc.contributor.author	Chuang, SH	en_US
dc.contributor.author	Tsai, CE	en_US
dc.date.accessioned	2014-12-08T15:27:43Z	-
dc.date.available	2014-12-08T15:27:43Z	-
dc.date.issued	1995	en_US
dc.identifier.isbn	0-7803-2700-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19961	-
dc.language.iso	en_US	en_US
dc.title	A comparative study of CVD TiN and CVD TaN diffusion barriers for copper interconnection	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST	en_US
dc.citation.spage	461	en_US
dc.citation.epage	464	en_US
dc.contributor.department	奈米中心	zh_TW
dc.contributor.department	Nano Facility Center	en_US
dc.identifier.wosnumber	WOS:A1995BF10D00103	-
顯示於類別：	會議論文