Characterization and optimization of NO-nitrided gate oxide by RTP

Full metadata record

DC Field	Value	Language
dc.contributor.author	Sun, SC	en_US
dc.contributor.author	Chen, CH	en_US
dc.contributor.author	Yen, DLW	en_US
dc.contributor.author	Lin, CJ	en_US
dc.date.accessioned	2014-12-08T15:27:43Z	-
dc.date.available	2014-12-08T15:27:43Z	-
dc.date.issued	1995	en_US
dc.identifier.isbn	0-7803-2700-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19962	-
dc.language.iso	en_US	en_US
dc.title	Characterization and optimization of NO-nitrided gate oxide by RTP	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST	en_US
dc.citation.spage	687	en_US
dc.citation.epage	690	en_US
dc.contributor.department	奈米中心	zh_TW
dc.contributor.department	Nano Facility Center	en_US
dc.identifier.wosnumber	WOS:A1995BF10D00155	-
Appears in Collections:	Conferences Paper