Micro-Photoluminescence from a Single InGaN-based Nano-Pillar Fabricated by Focused Ion Beam Milling

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yen, H. H.	en_US
dc.contributor.author	Chiu, C. H.	en_US
dc.contributor.author	Yu, Peichen	en_US
dc.contributor.author	Kao, C. C.	en_US
dc.contributor.author	Lin, C.	en_US
dc.contributor.author	Kuo, H. C.	en_US
dc.contributor.author	Lu, T. C.	en_US
dc.contributor.author	Wang, S. C.	en_US
dc.contributor.author	Yeh, W. Y.	en_US
dc.date.accessioned	2014-12-08T15:03:27Z	-
dc.date.available	2014-12-08T15:03:27Z	-
dc.date.issued	2008	en_US
dc.identifier.isbn	978-1-55752-859-9	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1996	-
dc.description.abstract	Micro-photoluminescence from GaN/InGAN multiple quantum wells embedded in a nano-pillar structure with a diameter of 300nm is characterized. The emission spectrum shows a blue shift of 68.3 meV in energy due to strain relaxation. (c) 2008 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Micro-Photoluminescence from a Single InGaN-based Nano-Pillar Fabricated by Focused Ion Beam Milling	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9	en_US
dc.citation.spage	1327	en_US
dc.citation.epage	1328	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000260498400666	-
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