Study of Schottky barriers on n-type GaN grown by LP-MOCVD

標題:	Study of Schottky barriers on n-type GaN grown by LP-MOCVD
作者:	Guo, JD Feng, MS Pan, FM 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1995
URI:	http://hdl.handle.net/11536/19996
ISBN:	7-5053-3285-6
期刊:	PROCEEDINGS OF THE FOURTH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY
起始頁:	A515
結束頁:	A517
顯示於類別：	會議論文