Study of Schottky barriers on n-type GaN grown by LP-MOCVD

Title:	Study of Schottky barriers on n-type GaN grown by LP-MOCVD
Authors:	Guo, JD Feng, MS Pan, FM 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Issue Date:	1995
URI:	http://hdl.handle.net/11536/19996
ISBN:	7-5053-3285-6
Journal:	PROCEEDINGS OF THE FOURTH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY
Begin Page:	A515
End Page:	A517
Appears in Collections:	Conferences Paper