Fabrication of Ti and Co silicided shallow junctions using novel techniques

Full metadata record

DC Field	Value	Language
dc.contributor.author	Ma, MP	en_US
dc.contributor.author	Lin, CT	en_US
dc.contributor.author	Cheng, HC	en_US
dc.date.accessioned	2014-12-08T15:27:44Z	-
dc.date.available	2014-12-08T15:27:44Z	-
dc.date.issued	1995	en_US
dc.identifier.isbn	7-5053-3285-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19998	-
dc.language.iso	en_US	en_US
dc.title	Fabrication of Ti and Co silicided shallow junctions using novel techniques	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	PROCEEDINGS OF THE FOURTH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY	en_US
dc.citation.spage	A662	en_US
dc.citation.epage	A664	en_US
dc.contributor.department	奈米中心	zh_TW
dc.contributor.department	Nano Facility Center	en_US
dc.identifier.wosnumber	WOS:A1995BF21N00196	-
Appears in Collections:	Conferences Paper